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| RS4005G thru RS410G KBJ4005G thru KBJ410G SINGLE-PHASE SILICON BRIDGE CHENG- YI ELECTRONIC VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 4.0 Amperes .189(4.8) .382(9.7) .366(9.3) .118(3.0)X45 .992(25.2) .916(26.0) .173(4.4) .150(3.8) .134(3.4) .60(15.3) .578(14.7) .157(4.0) FEATURES Rating to 1000V PRV Ideal for printed circuit board Realiable low cost construction utilizing molded plastic technique Plastic material has Underwriters Laboratory flammability classification 94V-O Lead solderable per MIL-STD-202 Meyhod 208 Surge overload rating to 120 Amperes peak Polarity symbols molded on body Mounting position:Any Weight:0.16 ounce 4.6 grams + ~ .075(1.9) .060(1.5) ~ .145(3.7) .130(3.3) .700(17.8) .677(17.2) .134(3.4) .122(3.1) .114(2.9) .098(2.5) .043(1.1) .035(0.9) .030(7.70) .287(7.30) .043(1.1) .031(.80) All Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. RS4005G RS401G RS402G KBJ402G 200 140 200 RS404G RS406G RS408G KBJ408G 800 560 800 RS410G KBJ410G 1000 700 1000 KBJ4005G KBJ401G KBJ404G KBJ406G 400 280 400 4.0 600 420 600 UNITS V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @ TC=115 C 0 VRRM VRMS VDC V(AV) 50 35 50 100 70 100 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum DC Forward Voltage drop per element at 2.0A DC Maximum DC Reverse Current at rated @ TA=250 C DC Blocking Voltage per element @ TA=125 C 0 0 IFSM 120 A VF IR CJ R JC TJ TSTG 1.0 5 500 40 5.5 0 V A A PF Typical Junction Capacitance ( Note 1) Typical Thermal Resistance ( Note 2) Operating Temperature Range Storage Temperature Range C/W 0 -55 to +150 -55 to +150 C C 0 Notes:1.Measured at 1.0 MHZ and applied reverse voltage of 4.0v DC 2.Thermal Resistance Junction to Case RS4005G thru RS410G KBJ4005G thru KBJ410G SINGLE-PHASE SILICON BRIDGE CHENG- YI ELECTRONIC RATING AND CHARACTERISTICS CURVES KBJ4005G THRU KBJ410G RS4005G THRU RS410G Fig.1 - MAXIMUM FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES 5 4 120 100 3 80 2 60 1 0 TJ=150C single sine-wave (JEDEC Method) Fig.4 - MAXIMUM NON-REPETITIVE SURGE CURRENT 60Hz RESISTIVE OR INDUCTIVE LOAD 50 75 100 125 150 40 20 0 1 2 5 10 20 50 100 25 CASE TEMPERATURE, 0C INSTANTANEOUS FORWARD CURRENT. AMPERES Fig.2 - TYPICAL FORWARD CHARACTERISTICS 10 0 TJ=150C NUMBER OF CYCLES AT 60 Hz Fig.5 - TYPICAL REVERSE CHARACTERISTICS 1.0 1000 TJ=250C 0 TJ=150C 0.1 0 TJ=125C 100 .01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 TJ=100C INSTANTANEOUS FORWARD VOLT AGE, VOLTS 10 Fig.3 - TYPICAL JUNCTION CAPACITANCE 100 1.0 TJ=250C f=1.0MHz TJ=250C CAPACITANCE, pF 50 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE 10 1 4 10 100 REVERSE VOLTAGE, VOLTS |
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